Method for forming a base link in a bipolar transistor

Details Method for forming a base link in a bipolar transistor Method for forming a base link in a bipolar transistor

1993-09-23

1994-12-20

Thomas, Tom

Fishing, trapping, and vermin destroying

437228, 437917, 437 32, 437909, 148DIG10, H01L 21265

Patent

active

053745680

ABSTRACT:
A method for forming an improved base link for a bipolar transistor is provided. The wall where the base link (44) is formed is substantially vertical (32,34). An oxide mask (24) is use during etching of the polysilicon layer (18) that provides the wall, instead of a conventional photoresist mask. The preferred method is compatible with manufacturing BiCMOS devices.

REFERENCES:
patent: 4892837 (1990-01-01), Kudo
patent: 5204276 (1993-04-01), Nakajima et al.
Wolf et al., "Sihion Processing for the VLSI Era, vol. 1" pp. 521-529, 547-557.
G. G. Shahidi, "A Novel High-Performance Lateral Bipolar on SOI." IEEE. 1991. pp. 663-666.

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