Method for formation of insulation film on silicon buried in tre

Details Method for formation of insulation film on silicon buried in tre Method for formation of insulation film on silicon buried in tre

1988-07-19

1989-10-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 78, 437 72, H01L 2176

Patent

active

048732036

ABSTRACT:
An insulation film on silicon buried in a trench is prepared by forming a field oxide film by using a first Si.sub.3 N.sub.4 mask formed on a silicon substrate, forming a second Si.sub.3 N.sub.4 mask for formation of a trench, forming a trench in the silicon substrate by using the second Si.sub.3 N.sub.4 mask, burying polycrystalline silicon in the trench, removing the second Si.sub.3 N.sub.4 mask while leaving the first Si.sub.3 N.sub.4 mask and oxidizing the surface of the polycrystalline silicon buried in the trench by thermal oxidation. The so-formed insulation film on silicon buried in the trench has a uniform thickness and a high dielectric strength. The surface of the substrate at a part where an active element will be formed in the future is not oxidized.

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