Fishing – trapping – and vermin destroying
Patent
1989-06-22
1990-11-06
Simmons, David
Fishing, trapping, and vermin destroying
437 70, 437164, 437242, 156643, 156662, H01L 2176, H01L 21308
Patent
active
049686410
ABSTRACT:
In a method for the formation of an isolating oxide layer on a silicon substrate, an anti-nitridation layer is formed on a silicon substrate at locations where isolating oxide is desired. The anti-nitridation layer has openings therethrough which expose the silicon substrate at locations where isolating oxide is not desired. A thin silicon nitride layer is selectively grown at the locations where isolating oxide is not desired by nitridation of the exposed silicon substrate. Isolating oxide is then selectively grown at the locations where isolating oxide is desired. The thin silicon nitride layer inhibits oxide growth at the locations where isolating oxide is not desired. The method reduces "bird's beak" formation and is particularly applicable to high density IGFET devices.
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Abbott Roger S.
Ellul Joseph P.
Kalnitsky Alexander
Tay Sing Pin
Johnson Lori-ann
Junkin C. W.
Simmons David
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