Method for formation of a self-aligned N-well for isolated field

Details Method for formation of a self-aligned N-well for isolated field Method for formation of a self-aligned N-well for isolated field

1997-01-07

1999-06-15

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

438 20, H01J 902

Patent

active

059116153

ABSTRACT:
A method for use in manufacture of field emitter devices is provided specifically for forming electron emitter tips in a doped semiconductor substrate. The method comprises the following steps: forming a depression around an emitter area in the substrate; doping the substrate in the depression; and expanding the dopant in the depression into the emitter area.

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