Fishing – trapping – and vermin destroying
Patent
1994-01-31
1995-12-19
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 31, 437940, 437924, 437 59, H01L 21265
Patent
active
054768004
ABSTRACT:
The present invention provides a buried layer fabrication sequence suitable for bipolar and BiCMOS applications. The buried layer fabrication sequence for forming a buried layer having a first conductivity type includes the steps of: forming a first dielectric layer on a semiconductor substrate, the semiconductor substrate having a second conductivity type; forming a first mask layer having openings on top of the first dielectric layer, wherein the openings in the first mask layer are positioned over the regions where the first buried layer is formed; exposing the semiconductor substrate in the regions where openings in the first mask layer are formed; forming a second dielectric layer; removing the second dielectric layer; and forming a semiconductor layer.
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Wolf, Silicon Processing for the VLSI Era vol. 1--Process Technology, 245-248 and 256-261 copyright .RTM.1986 by Lattice Press.
Burton Gregory N.
Lau Chi-Kwan
Lin Chen-Hsi
Chaudhuri Olik
Mulpuri S.
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