Semiconductor device manufacturing: process – Miscellaneous
Reexamination Certificate
2007-03-12
2009-08-18
Andújar, Leonardo (Department: 2893)
Semiconductor device manufacturing: process
Miscellaneous
C438S905000, C438S935000
Reexamination Certificate
active
07576018
ABSTRACT:
A method is provided to cause deformation of a substrate during processing of the substrate. The method comprises supporting a substrate on a substrate support in a vacuum chamber for processing; providing backside gas through inlet ports of each of a plurality of groups of ports lying in a respective plurality of areas across the substrate support to a space between the substrate support and the substrate, each of said areas of the substrate support having at least one backside gas inlet port connected to a supply of backside gas and at least one outlet port connected to a vacuum exhaust system; and separately controlling the pressure of the backside gas at different ones of the ports of the plurality to control separately, in areas around the respective ones of said ports, the local pressure force exerted on the backside of the substrate, by separately dynamically controlling at least one valve affecting gas flow to a port of each of said areas while separately dynamically controlling at least one other valve affecting gas flow from the remaining plurality of ports of each of said areas surrounding said port to which gas is introduced.
REFERENCES:
patent: 5094885 (1992-03-01), Selbrede
patent: 6318384 (2001-11-01), Khan et al.
patent: 6492612 (2002-12-01), Taguchi et al.
patent: 02/086957 (2002-10-01), None
Andújar Leonardo
Harrison Monica D
Tokyo Electron Limited
Wood Herron & Evans L.L.P.
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