Fishing – trapping – and vermin destroying
Patent
1988-04-18
1989-07-11
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 78, 437 90, H01L 21205, H01L 2176
Patent
active
048472140
ABSTRACT:
Filled trenches useful in semiconductor devices for isolation or other purposes are provided by etching a trench in the semiconductor substrate, lining the trench with a first material (e.g., silicon dioxide), covering the first material with a seed layer (e.g., polysilicon) for nucleating a further material, removing a part of the seed layer on the first material in an upper part of the trench, and then filling the trench by selectively depositing the further material (e.g., polysilicon) on the remaining seed layer.
Thermally grown silicon dioxide is convenient for the first material. The first material and seed layer may extend over the substrate surface. The upper portion of the seed layer is conveniently removed by first covering the seed layer with a mask (e.g., photoresist) and then etching back the mask to expose the seed layer above the substrate surface and in the upper portion of the trench, leaving part of the mask in the lower portion of the trench. The exposed portion of the seed layer is then etched away. The remaining portion of the mask is removed before growing the trench filling material on the remaining part of the seed layer in the trench.
REFERENCES:
patent: Re32090 (1986-03-01), Jaccodine et al.
patent: 4473598 (1984-09-01), Ephrath et al.
patent: 4476623 (1984-10-01), El-Kareh
patent: 4528047 (1985-07-01), Beyer et al.
patent: 4688063 (1987-08-01), Lu et al.
patent: 4689656 (1987-10-01), Silvestri et al.
patent: 4702795 (1987-10-01), Douglas
H. S. Bhatia et al., "Poly Filled Trench Isolation", IBM Technical Disclosure Bulletin, vol. 25, No. 3B, Aug. 1982, pp. 1482-1484.
Robb Francine Y.
Robinson F. J.
Svechovsky Bridget
Wood Thomas E.
Barbee Joe E.
Chaudhuri Olik
Handy Robert M.
Motorola Inc.
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