Method for filling substrate recesses using pressure and heat tr

Details Method for filling substrate recesses using pressure and heat tr Method for filling substrate recesses using pressure and heat tr

1997-04-10

1999-08-03

Lusignan, Michael

Coating processes

With post-treatment of coating or coating material

Heating or drying

427 97, 427123, 427124, 4273767, 4273977, 438424, 438430, 438660, 438688, 2041921, B05D 512, B05D 302

Patent

active

059322896

ABSTRACT:
A deposit layer is deposited on the exposed surface of a surface layer formed on a semiconductor wafer. The depositing of the deposit layer continues at least until the deposit layer extends over all the recesses to close completely the openings of all of the recesses to thereby form enclosed areas within the recesses which are devoid of a material of the deposit layer. After forming the enclosed areas within the recesses, the wafer and the deposit layer are then subjected to pressure and heat treatment sufficient to cause parts of the deposit layer to deform to fill the enclosed areas within the respective recesses.

REFERENCES:
patent: 4372989 (1983-02-01), Menzel
patent: 4465716 (1984-08-01), Baber et al.
patent: 4502210 (1985-03-01), Okumura et al.
patent: 4654113 (1987-03-01), Tuchiya et al.
patent: 4673592 (1987-06-01), Porter et al.
patent: 5011793 (1991-04-01), Obinata
patent: 5052102 (1991-10-01), Fong et al.
patent: 5104482 (1992-04-01), Monkowski et al.
patent: 5231751 (1993-08-01), Sachdev et al.
patent: 5416569 (1995-05-01), Goldberg
patent: 5527561 (1996-06-01), Dobson
patent: 5529954 (1996-06-01), Iijima et al.
patent: 5547902 (1996-08-01), Rohner
patent: 5599744 (1997-02-01), Koh et al.
patent: 5690837 (1997-11-01), Nakaso et al.

Affiliated with

Also associated with

Rating

Method for filling substrate recesses using pressure and heat tr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for filling substrate recesses using pressure and heat tr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for filling substrate recesses using pressure and heat tr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-847777