Adhesive bonding and miscellaneous chemical manufacture – Methods – Surface bonding and/or assembly therefor
Patent
1974-11-29
1976-07-13
Kendall, Ralph S.
Adhesive bonding and miscellaneous chemical manufacture
Methods
Surface bonding and/or assembly therefor
427 85, 427 93, 427 95, 427240, 357 49, H01L 21306
Patent
active
039691683
ABSTRACT:
A process is disclosed for filling grooves, moats, and channels formed by both channel and anisotropic etching techniques. Basically the process is a two-step process to be performed on a wafer in which a channel and/or a moat has been formed. A P+ (boron) doped oxide is placed in the grooves or moats using spinon techniques followed by a uniform deposition of polycrystalline silicon over the entire wafer. Due to the spinning effects the P+ doped oxide is collected mostly in the grooves or moats. The P+ doped oxide that remains outside of the grooves and/or moats is removed using standard photolithographic procedures. The wafer is now heated to a temperature sufficient to drive the boron impurities from the P+ doped oxide into the polycrystalline silicon. A portion of a polycrystalline silicon now becomes heavily P+ doped. The remaining polycrystalline silicon remains undoped. The wafer is then etched by an etchant which effectively stops when the material being etched is highly P+ doped. In this manner a portion of the remaining undoped polycrystalline material is removed and the highly doped polycrystalline material is left in the channels and/or moats. The above can be repeated until the moats or channels are completely filled.
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patent: 3432792 (1969-03-01), Hatcher
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patent: 3738883 (1972-06-01), Bean et al.
patent: 3772577 (1973-11-01), Planey
patent: 3789023 (1974-01-01), Ritchie
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patent: 3892608 (1975-07-01), Kuhn
Berenbaum, IBM Tech. Discl. Bull., vol. 11, No. 12, May 1969, p. 1706.
Higgins Willis E.
Kendall Ralph S.
Motorola Inc.
Weiss Harry M.
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