Method for filling contact hole

Details Method for filling contact hole Method for filling contact hole

1990-05-29

1992-01-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437193, 437196, 437200, 437203, 437229, H01L 21285

Patent

active

050844130

ABSTRACT:
A method for filling a contact hole in which (i) a silicon dioxide layer is formed on a silicon substrate; (ii) a contact hole is formed in the silicon dioxide layer; (iii) polysilicon film is formed on the side and bottom surface portions of the contact hole; (iv) gas containing tungsten reacts with the film; and (v) the contact hole is filled up with tungsten.

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Saraswat et al., "Selective CVD of Tungsten for VLSI Technology", VLSI Science & Technology, Proceedings, vol. 84, 1984, pp. 409-419.
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