Method for filling a contact hole and integrated circuit...

Details Method for filling a contact hole and integrated circuit... Method for filling a contact hole and integrated circuit...

2008-02-15

2010-11-02

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

C257SE23068, C438S256000, C438S399000, C438S629000

Reexamination Certificate

active

07825510

ABSTRACT:
A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to produce and has good electrical properties.

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European Office Action dated Aug. 30, 2007 English Translation included.

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