Method for ferroelectric thin film production

Details Method for ferroelectric thin film production Method for ferroelectric thin film production

1994-09-14

1997-10-07

Utech, Benjamin

Coating processes

Coating by vapor, gas, or smoke

Metal coating

4272551, 4272552, 4272553, 4273762, C23C 1600

Patent

active

056745630

ABSTRACT:
A ferroelectric thin film is produced on a substrate placed in an oxygen gas atmosphere within a reaction chamber. Evaporated source materials (organic metal compounds) are separately introduced in a predetermined sequence into the reaction chamber to produce a PZT or PLZT layer structure having an estimated stoichiometric composition. This cycle of introduction of the source materials is repeated continuously to produce a PZT or PLZT ferroelectric thin film having a predetermined number of PZT or PLZT layer structures piled on the substrate.

REFERENCES:
patent: 5104690 (1992-04-01), Greenwald
patent: 5198269 (1993-03-01), Swartz et al.
patent: 5258204 (1993-11-01), Wernberg et al.
patent: 5372859 (1994-12-01), Thakoor
patent: 5478610 (1995-12-01), Desu et al.
Pp. 115-117 of "Ferroelectric Thin Film Integration Techniques", published Feb. 2, 1992 by Science Forum, Japan.

Affiliated with

Also associated with

Rating

Method for ferroelectric thin film production does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for ferroelectric thin film production, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for ferroelectric thin film production will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2354883