Method for fabrication semiconductor device

Details Method for fabrication semiconductor device Method for fabrication semiconductor device

2008-05-13

2008-05-13

Deo, Duy-Vu N (Department: 1792)

Optics: measuring and testing

Dimension

C356S626000

Reexamination Certificate

active

10531700

ABSTRACT:
The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which includes a vacuum chamber1, a susceptor7arranged in the vacuum chamber1to place a wafer8, a gas introducing means2to introduce the material gas into the vacuum chamber and a high-frequency power introducing means6. The gas introduced into the vacuum chamber by the gas introducing means2is converted into a plasma by the high-frequency power, and a plurality of holes are selectively formed in the oxide film23of a main wafer surface in a plasma atmosphere. In the hole forming step, light15having a continuous spectrum is irradiated on a flat portion and a hole portion of the main surface of the semiconductor wafer thereby to measure the reflectivity change in the flat portion and the hole portion.

REFERENCES:
patent: 4615620 (1986-10-01), Noguchi et al.
patent: 4744660 (1988-05-01), Noguchi et al.
patent: 5792376 (1998-08-01), Kanai et al.
patent: 6268293 (2001-07-01), Clevenger et al.
patent: 6-177219 (1994-06-01), None
patent: 2000-131028 (2000-05-01), None
patent: 2001-284323 (2001-10-01), None
patent: 2002-93870 (2002-03-01), None

Affiliated with

Also associated with

Rating

Method for fabrication semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabrication semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabrication semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3939831