Method for fabrication semiconductor device

Details Method for fabrication semiconductor device Method for fabrication semiconductor device

2008-05-13

2008-05-13

Deo, Duy-Vu N (Department: 1792)

Optics: measuring and testing

Dimension

C356S626000

Reexamination Certificate

active

07372582

ABSTRACT:
The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which includes a vacuum chamber1, a susceptor7arranged in the vacuum chamber1to place a wafer8, a gas introducing means2to introduce the material gas into the vacuum chamber and a high-frequency power introducing means6. The gas introduced into the vacuum chamber by the gas introducing means2is converted into a plasma by the high-frequency power, and a plurality of holes are selectively formed in the oxide film23of a main wafer surface in a plasma atmosphere. In the hole forming step, light15having a continuous spectrum is irradiated on a flat portion and a hole portion of the main surface of the semiconductor wafer thereby to measure the reflectivity change in the flat portion and the hole portion.

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