Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2005-08-17
2009-08-11
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C257S098000
Reexamination Certificate
active
07572657
ABSTRACT:
A method for producing a semiconductor light-emitting device includes stacking at least a first conductive type semiconductor layer (2), an active layer (3) and a second conductive type semiconductor layer (4) on a substrate (1) to form a wafer, then forming on a side of growth surfaces of the semiconductor layers first trenches (40) exposing the first conductive type semiconductor layer, further forming second trenches (50) reaching the substrate from above the first trenches by using a laser beam, subsequently forming third trenches (60) from the substrate at the positions corresponding to the second trenches, and finally cutting the wafer into chips. The produced semiconductor chips provide an enhanced efficiency of extracting emitted light even when the end faces thereof are smooth surfaces and they allow the semiconductor layer to be cut without distorting the end faces of the chips.
REFERENCES:
patent: 6156584 (2000-12-01), Itoh et al.
patent: 2004/0051118 (2004-03-01), Bruhns et al.
patent: 2005/0186760 (2005-08-01), Hashimura et al.
patent: 1484328 (2004-03-01), None
patent: 5-343742 (1993-12-01), None
patent: 6-244458 (1994-09-01), None
patent: 11-163403 (1999-06-01), None
patent: 11-354841 (1999-12-01), None
patent: 2001-284291 (2001-10-01), None
patent: 2001-284293 (2001-10-01), None
patent: 2003-17790 (2003-01-01), None
patent: 2003-78164 (2003-03-01), None
patent: 2003-218065 (2003-07-01), None
patent: 2003-338638 (2003-11-01), None
patent: 2004-31526 (2004-01-01), None
patent: 2005-252245 (2005-09-01), None
A. R. Franklin, et al, “Shaped Electroluminescent GaAs Diodes”, Journal of Applied Physics, vol. 35, No. 4, Apr. 1964, pp. 1153-1155.
Lee Calvin
Showa Denko K.K.
Sughrue & Mion, PLLC
LandOfFree
Method for fabrication of semiconductor light-emitting... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabrication of semiconductor light-emitting..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabrication of semiconductor light-emitting... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4060164