Method for fabrication of semiconductor devices on...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S019000

Reexamination Certificate

active

07638353

ABSTRACT:
A method for making a semiconductor device having front-surface electrical terminals in which the device is manufactured so as to include a bottom electrode, a top electrode and a semiconductor body therebetween. A first bus bar is disposed in a groove in the semiconductor body. It is in electrical communication with the bottom electrode, and includes a tab portion which projects from the device. A second bus bar is in electrical communication with the top electrode, and is disposed atop the first electrode, and electrically insulated therefrom. The tab of the first bus bar provides one terminal of the device and is folded onto the second bus bar and is electrically insulated therefrom. The second bus bar provides the second terminal of the device.

REFERENCES:
patent: 5296043 (1994-03-01), Kawakami et al.
patent: 5569332 (1996-10-01), Glatfelter et al.
patent: 6468828 (2002-10-01), Glatfelter et al.
patent: 6500295 (2002-12-01), Kubota
patent: 6767762 (2004-07-01), Guha
patent: 7176543 (2007-02-01), Beernink
patent: 7342171 (2008-03-01), Khouri et al.

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