Method for fabrication of semiconductor device capable of preven

Details Method for fabrication of semiconductor device capable of preven Method for fabrication of semiconductor device capable of preven

1995-02-03

1996-07-16

Fourson, George

Fishing, trapping, and vermin destroying

437203, 437235, 437968, 437923, 437 90, H01L 2144

Patent

active

055366791

ABSTRACT:
There is disclosed a method for the fabrication of semiconductor device. A problem of short circuit that a metal wiring comes into contact with an area of a silicon substrate which area, when a contact hole is formed, is exposed due to misalignment of the metal wiring mask can be prevented by formation of an oxide layer in a lower area of the contact hole. The method comprises the steps of: forming a field oxide layer on a predetermined area of a silicon substrate; forming a conductive layer pattern in such a way that it overlaps with the filed oxide layer, the conductive layer pattern insulated from the silicon substrate; forming a blanket interlayer insulation film over the resulting structure; etching a contact region of the interlayer insulation film, to form a contact hole which exposes an area of the conductive layer pattern, an area of the field oxide layer being etched owing to misalignment of the contact mask and an area of the silicon substrate being exposed through the contact hole; selectively depositing an epitaxial single crystal silicon on the exposed area of the silicon substrate; oxidizing the epitaxial single crystal silicon at a predetermined thickness, to form an oxide layer; and forming a metal wiring which is electrically connected with the conductive layer pattern and electrically insulated from the silicon substrate.

REFERENCES:
patent: 5124276 (1992-06-01), Samata et al.

Affiliated with

Also associated with

Rating

Method for fabrication of semiconductor device capable of preven does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabrication of semiconductor device capable of preven, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabrication of semiconductor device capable of preven will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1784111