Method for fabrication of semiconductor device

Details Method for fabrication of semiconductor device Method for fabrication of semiconductor device

2007-01-02

2007-01-02

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

C438S041000, C438S044000, C438S483000, C257SE21090

Reexamination Certificate

active

11125111

ABSTRACT:
On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of the depressed portion or less.

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