Method for fabrication of semiconductor device

Details Method for fabrication of semiconductor device Method for fabrication of semiconductor device

1992-03-13

1993-11-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 10, 437114, H01L 21265

Patent

active

052623386

ABSTRACT:
A semiconductor device of the MOS construction such that a gate oxide film of the device has a gate area in the range of from 5 to 15 mm.sup.2 and a thickness in the range of from 15 to 40 nm and the oxide film dielectric breakdown voltage is not less than 8 MV/cm when a gate current caused to flow in response to application of a direct-current voltage between a phosphorus-doped polysilicon electrode formed on the oxide film and a silicon single crystal substrate increases past 1 .mu.A/mm.sup.2 as current density is obtained by using a silicon wafer substrate having an oxygen concentration of not more than 1.times.10.sup.18 atoms/cm.sup.3.

REFERENCES:
patent: 4371403 (1983-02-01), Ikubo et al.
patent: 5061642 (1991-10-01), Fujioka
patent: 5110404 (1992-05-01), Fusegawa et al.

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