Method for fabrication of interconnections in semiconductor devi

Details Method for fabrication of interconnections in semiconductor devi Method for fabrication of interconnections in semiconductor devi

1995-06-30

1996-12-03

Quach, T. N.

Fishing, trapping, and vermin destroying

437194, 437198, H01L 21283

Patent

active

055808247

ABSTRACT:
An interconnection pattern of a Cr film is defined by a wet-etching process by using fluoric acid and then a Cu film is grown over the surface of the Cr film. It is therefore not necessary to use a chloride gas when defining an interconnection pattern of a Cr film and when forming a Cu film. As a consequence, CuCl.sub.2, which is a chloride, will not remain after the fabrication of an interconnection and corrosion of Cu and Cr films owing to the attachment of hydrochloric acid resulting from the reaction between a chloride and water. The present invention therefore can provide highly reliable and dependable interconnection structures for semiconductor devices and a method for fabrication thereof. The growth of Al on Cr is also shown.

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CVD Copper Metallurgy for ULSI Interconnections, Y. Arlta et al, NTT LSI Laboratories, 42 IEDM 90, pp. 3.1.1. to 3.1.4.

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