Method for fabrication of improved storage target and target pro

Static information storage and retrieval – Radiant energy – Electron beam

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204 38A, G11C 1302, C25D 1132

Patent

active

042120829

ABSTRACT:
An improved target for storage of electric charge, in an electron beam addressable memory, utilizes an anodic oxide grown upon a semiconductor layer, forming part of a semiconductor diode structure. The anodic oxide is overlayed with a planar film of conductive material and the target structure is scanned with an electron beam for writing of electric charge storage therein and reading of the electron charge patterns therefrom over relatively greater numbers of erase/write operations relative to a target having a thermally-grown oxide layer.

REFERENCES:
patent: 3345274 (1967-10-01), Schmidt
patent: 3761895 (1973-09-01), Ellis et al.
patent: 3764491 (1973-10-01), Schwartz

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