Metal treatment – Compositions – Heat treating
Patent
1976-06-01
1978-02-28
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
29577C, 29578, 148175, 148187, 357 15, 357 35, 357 36, 357 44, 357 46, 357 48, 357 91, H01L 21265, H01L 2702
Patent
active
040765563
ABSTRACT:
An integrated transistor circuit arrangement provides a multicollector transistor with Schottky diodes and ohmic connections selectively formed at the collector terminals. In the illustrative example, a vertical transistor is formed in an N-type epitaxial layer overlying an N+ substrate. A through-extending region of P+ material encircles the region of the epitaxial layer in which the vertical transistor is formed. The base of the vertical transistor is formed by the implanting of P-type impurity in a location spaced apart from the surfaces of the epitaxial layer. The resulting base has a symmetrical profile relative to the faces of the epitaxial layer. Therefore, the transistor may be operated with the collector at the surface without penalty of electrical operation. In the illustrative example, a PNP lateral transistor is utilized as a current source for the vertical transistor.
REFERENCES:
patent: 3591430 (1971-07-01), Schlegel
patent: 3656028 (1972-04-01), Langdon
patent: 3657612 (1972-04-01), Wiedmann
patent: 3736477 (1973-05-01), Berger et al.
patent: 3775192 (1973-11-01), Beale
patent: 3823353 (1974-07-01), Berger et al.
patent: 3922565 (1975-11-01), Berger et al.
patent: 3961351 (1976-06-01), Blatt
Berger et al., "Monolithically Integrated Logical Basic Circuit" I.B.M. Tech. Discl. Bull., vol. 16, No. 2, July 1973, pp. 650-651.
Berger et al., "Base Ring Transistor and Method of Manufacture".
Ibid., vol. 14, No. 1, June 1971, p. 302.
De Troy, N. C., "Integrated Injection Logic - Present and Future" IEEE J. Solid-State Circuits, vol. sc-9, No. 5, Oct. 1974, pp. 206-211.
Hart et al., "Bipolar LSI--Integrated Injection Logic" Electronics, Oct. 3, 1974, pp. 111-118.
Agraz-Guerena Jorge
Fulton Alan William
Albrecht John C.
Bell Telephone Laboratories Incorporated
Rutledge L. Dewayne
Saba W. G.
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