Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-03-14
2006-03-14
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C505S191000, C505S193000, C505S232000
Reexamination Certificate
active
07012275
ABSTRACT:
A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y2O3and then a layer of CeO2is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO2layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10° to about 40° and YBCO superconductors are used.
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U. Balachandran, B. Ma, M. Li, B.L. Fisher and U. Balachandran, “Inclined Substrate Deposition of Biaxially Textured Magnesium Oxide Films for YBCO Coated Conductors”, Physica C, 366, 270-276 (2002).
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Balachandran Uthamalingam
Ma Beihai
Miller Dean
Emrich & Dithmar LLC
Jackson Jerome
The University of Chicago
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