Method for fabrication of high temperature superconductors

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity

Reexamination Certificate

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C505S191000, C505S193000, C505S232000

Reexamination Certificate

active

07012275

ABSTRACT:
A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y2O3and then a layer of CeO2is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO2layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10° to about 40° and YBCO superconductors are used.

REFERENCES:
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patent: 6579360 (2003-06-01), Balachandran et al.
patent: 2002/0022578 (2002-02-01), Schmidt et al.
patent: 2003/0013613 (2003-01-01), Balachandran et al.
patent: 2005/0039672 (2005-02-01), Selvamanickam et al.
B. Ma, M. Li, Y.A. Lee, R.E. Koritala, B.L. Fisher and U. Balachandran, Inclined-substrate Deposition of Biaxially Textured Magnesium Oxide Thin Films for YBCO Coated Conductors Physica C 366 (2002) 270-276.
B. Ma et al., “High Critical Current Density of YBCO Coated Conductors Fabricated by Inclined Substrate Deposition”, Physica C 403 (2004) 183-190.
U. Balachandran, B. Ma, M. Li, B.L. Fisher and U. Balachandran, “Inclined Substrate Deposition of Biaxially Textured Magnesium Oxide Films for YBCO Coated Conductors”, Physica C, 366, 270-276 (2002).
U. Balachandran, B. Ma, M. Li, B.L. Fisher, R.E. Koritala and D.J. Miller, “Development of Coated Conductors by Inclined Substrate Disposition”, Advances in Cryogenic Engineering: ICMC, vol. 50, 2004, American Institute of Physics, 637-644.

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