Method for fabrication of a semiconductor device and structure

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature

Reexamination Certificate

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C438S197000, C438S455000, C257SE21023, C257SE21598

Reexamination Certificate

active

08058137

ABSTRACT:
A method of manufacturing a semiconductor wafer, the method including: providing a base wafer including a semiconductor substrate, metal layers and first alignment marks; transferring a monocrystalline layer on top of the metal layers, wherein the monocrystalline layer includes second alignment marks; and performing a lithography using at least one of the first alignment marks in a first direction and at least one of the second alignment marks in a second direction.

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