Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-07-26
2011-07-26
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S774000, C257S797000, C438S458000
Reexamination Certificate
active
07986042
ABSTRACT:
A semiconductor device comprising: a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layers; wherein the second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands wherein each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.
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Beinglass Israel
Cronquist Brian
de Jong Jan Lodewijk
Or-Bach Zvi
Sekar Deepak C.
MonolithIC 3D Inc.
Pert Evan
Sartori Michael A.
Venable LLP
Wang Yao
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