Method for fabrication of a non-volatile JRAM cell

Details Method for fabrication of a non-volatile JRAM cell Method for fabrication of a non-volatile JRAM cell

1981-05-18

1983-09-06

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 148187, H01L 21265

Patent

active

044021267

ABSTRACT:
A non-volatile memory storage cell utilizing a single vertical junction field-effect transistor is fabricated by a method, which is compatible with the fabrication of MOSFET interface and logic circuits on the same chip. Assembly of a multi-dielectric stack, which contains the non-volatile element, is accomplished late in the process to avoid degradation of the non-volatility characteristics.

REFERENCES:
patent: 4142111 (1979-02-01), McElroy
patent: 4151537 (1979-04-01), Goldman et al.
patent: 4156939 (1979-05-01), Takemae et al.
patent: 4201997 (1980-05-01), Darley et al.
patent: 4250206 (1981-02-01), Bate et al.

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