Chemistry: electrical and wave energy – Processes and products
Patent
1983-03-09
1984-05-01
Tufariello, T. M.
Chemistry: electrical and wave energy
Processes and products
204 24, 204273, C25D 502, C25D 704
Patent
active
044459785
ABSTRACT:
A method is provided for fabricating a via connector from a first surface of a semiconductor wafer to an opposite second surface of the wafer. The first step consists of forming an adherent metal layer on the first surface on the semiconductor wafer. If the first surface of the semiconductor wafer has electronic components formed thereon, the metal layer is applied over the electronic components and preferably a protective layer of material is formed over the metal layer. Via holes are then laser drilled at predetermined locations through the metal layer and then through the semiconductor wafer. Thereafter a photoresist layer is applied over the first surface and exposed and developed to provide passage holes in the photoresist which are in alignment with the laser drilled apertures. The metal layer is then connected in the cathode position of the electroforming apparatus and via connectors are thereafter electroformed in the via holes.
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patent: 4135988 (1979-01-01), Dugan et al.
patent: 4258468 (1981-03-01), Balde
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patent: 4368106 (1983-01-01), Anthony
Brown Richard
Menna Raymond J.
Rao Srinivas T.
Whartenby James C.
Morris Birgit E.
RCA Corporation
Sites Edward J.
Tufariello T. M.
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