Fishing – trapping – and vermin destroying
Patent
1985-10-31
1987-08-25
Ozaki, George T.
Fishing, trapping, and vermin destroying
357 2313, 437913, 437 23, H01L 21425, H01L 2172
Patent
active
046883231
ABSTRACT:
A method for fabrication a vertical MOSFET which contains a protective element for protecting the gate electrode of an insulated gate field effect transistor. The protective element is formed of the same semiconductor layer as that of the gate electrode of the insulated gate field effect transistor and is formed integrally with the gate electrode on an insulating film formed on the surface of a semiconductor substrate.
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Severns, Electronics, "MOSFETs Rise to New Levels of Power," May 22, 1980, pp. 143-152.
Ashikawa Kazutoshi
Iijima Tetsuo
Ito Mitsuo
Okabe Takeaki
Yoshida Isao
Hitachi , Ltd.
Ozaki George T.
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