Method for fabricating vertical CMOS image sensor

Details Method for fabricating vertical CMOS image sensor Method for fabricating vertical CMOS image sensor

2005-12-06

2010-06-08

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S268000, C438S521000, C257SE21610, C257SE21643

Reexamination Certificate

active

07732246

ABSTRACT:
A method of fabricating a vertical CMOS image sensor is disclosed, to improve the integration with the decrease in size of pixel by minimizing the lateral diffusion, in which phosphorous and arsenic ions are implanted while controlling the dose and energy, the method including forming a first photodiode in a semiconductor substrate; forming a first epitaxial layer on the semiconductor substrate; forming a first plug by sequentially implanting first and second ions in the first epitaxial layer; forming a second photodiode in the first epitaxial layer; forming a second epitaxial layer in the first epitaxial layer; forming an isolation area in the second epitaxial layer; and forming a third photodiode and a second plug in the second epitaxial layer.

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