Method for fabricating VDMOS transistor with improved breakdown

Details Method for fabricating VDMOS transistor with improved breakdown Method for fabricating VDMOS transistor with improved breakdown

1995-04-21

1996-12-31

Fourson, George

Fishing, trapping, and vermin destroying

437 40, 437 41, 437911, 437912, 437913, 148DIG53, 148DIG126, H01L 4900

Patent

active

055894054

ABSTRACT:
The breakdown voltage of a VDMOS transistor is markedly increased without depressing other electrical characteristics of the device by tying the potential of a field-isolation diffusion, formed under the edge portion of a strip of field oxide separating a matrix of source cells from a drain diffusion, to the source potential of the transistor. This may be achieved by extending a body region of a peripheral source cell every given number of peripheral cells facing the strip of field-isolation structure until it intersects said field-isolation diffusion. By so connecting one peripheral source cell every given number of cells, the actual decrement of the overall channel width of the integrated transistor is negligible, thus leaving unaltered the electrical characteristics of the power transistor.

REFERENCES:
patent: 4757032 (1988-07-01), Contiero
patent: 5034790 (1991-07-01), Mukherjee
patent: 5430316 (1995-07-01), Contiero et al.
patent: 5453390 (1995-09-01), Nishizawa et al.
patent: 5474944 (1995-12-01), Zambrano
patent: 5474946 (1995-12-01), Ajit et al.
Ishikawa, et al. "A 2.45 GHx Power LD-MOSFET with Reduced Source Inductance by V-Groove Connections" IEDM, pp. 166-169, Dec. 1-4, 1985.

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