Fishing – trapping – and vermin destroying
Patent
1988-08-09
1989-10-24
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 26, 357 14, H01L 2993
Patent
active
048762113
ABSTRACT:
A process for fabricating varactor diodes using ion implantation techniques is described herein. Three successive implanations of N-type ions into a GaAs semi-insulating substrate provide a deep N.sup.+ type conductivity layer about 2-3 microns below the front major surface with concentration of at least 2.times.10.sup.18 ions/cm.sup.3. A fourth implantation of N type ions forms an N type conductivity layer over the N.sup.+ layer. An implanation of P type ions forms the P type conductivity layer over the N type conducitivity layer. A single rapid thermal anneal is performed on the substrate to remove damage to the crystal structure and to electrically activate the implants. The basic doped layered semiconductor structure is thereby produced using ion implantation. This ion implantation process provides a method for fabricating monolithic diode devices reliably and in mass quantities, which can be integrated with other monolithic devices.
REFERENCES:
patent: 4106953 (1978-08-01), Onodera
patent: 4438445 (1984-03-01), Colquhoun et al.
Hara et al., IEEE Transact. Consumer Electronics, V. CE-26 (Nov. 1980), pp. 729`733.
Ghandhi, VLSI Fabrication Principles John Wiley and Sons, Inc., New York, N.Y., pp. 333-337 (1983).
Chen James C.
Kanber Hilda
Chaudhuri Olik
Gudmestad Terje
Hughes Aircraft Company
Karambelas A. W.
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