Method for fabricating tungsten contact plug

Details Method for fabricating tungsten contact plug Method for fabricating tungsten contact plug

1993-12-27

1995-10-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 24, 437195, 148DIG17, H01L 21441

Patent

active

054551986

ABSTRACT:
A method for fabricating a contact plug capable of achieving a smooth tungsten growth by implanting silicon ions in the bottom surface of a via contact hole not only to remove a polymer formed on the bottom surface of the via contact hole, but also to provide a seed layer for the tungsten growth, and capable of preventing an adverse effect on the contact resistance resulting from a formation of AlF.sub.3 due to a direct contact between Al and WF.sub.6. The method includes the steps of forming a first oxide film, depositing a first metal layer on the first oxide film, forming a second oxide layer over the first metal layer, and etching a predetermined portion of the second oxide layer to form a via contact hole through which the first metal layer is partially exposed, implanting silicon ions in the bottom surface of the via contact hole to remove a fluorine-based polymer formed on the via contact hole bottom surface at the step of forming the via contact hole, depositing tungsten to form a tungsten plug buried in the via contact hole, and depositing a second metal layer over the entire exposed surface of the resulting structure so that the second metal layer can be in contact with the first metal layer via the tungsten plug.

REFERENCES:
patent: 4746621 (1988-05-01), Thomas et al.
patent: 4902645 (1990-02-01), Ohba
patent: 4954214 (1990-09-01), Ho
patent: 5176790 (1993-01-01), Arleo et al.
patent: 5231054 (1993-07-01), Kosugi
patent: 5258329 (1993-11-01), Shibata
patent: 5305519 (1994-04-01), Yamamoto et al.
patent: 5312518 (1994-05-01), Kadomura
Wolf et al., Silicon processing for the VLSI vol. I, pp. 543-555, 1986.

Affiliated with

Also associated with

Rating

Method for fabricating tungsten contact plug does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating tungsten contact plug, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating tungsten contact plug will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1077146