Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2005-04-12
2005-04-12
Kang, Donghee (Department: 2811)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S243000, C438S248000, C438S255000, C438S387000, C438S389000, C438S392000, C257S301000, C257S309000
Reexamination Certificate
active
06878600
ABSTRACT:
A method for fabricating trench capacitors having trenches with mesopores, the trench capacitors being suitable both for discrete capacitors and for integrated semiconductor memories, significantly increases the surface area for electrodes of the capacitors and, hence, the capacitance thereof. The mesopores, which are small woodworm-hole-like channels having diameters from approximately 2 to 50 nm, are fabricated electrochemically. It is, thus, possible to produce capacitances with a large capacitance-to-volume ratio. Growth of the mesopores stops, at the latest, when the mesopores reach a minimum distance from another mesopore or adjacent trench (self-passivation). As such, the formation of “short circuits” between two adjacent mesopores can be avoided in a self-regulated manner. Furthermore, a semiconductor device is provided including at least one trench capacitor on the front side of a semiconductor substrate fabricated by the method according to the invention.
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Birner Albert
Franosch Martin
Goldbach Matthias
Greenberg Laurence A.
Infineon - Technologies AG
Kang Donghee
Locher Ralph E.
Stemer Werner H.
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