Method for fabricating titanium silicide contacts

Details Method for fabricating titanium silicide contacts Method for fabricating titanium silicide contacts

1993-06-04

1994-11-29

Quach, T. N.

Fishing, trapping, and vermin destroying

437 29, 437 57, 437190, 148DIG19, 148DIG147, H01L 21265, H01L 21283

Patent

active

053690559

ABSTRACT:
A method for fabricating titanium silicide contacts wherein prior to a Ti sputtering process, ions having a conductivity opposite to the conductivity of source and drain regions on each well are implanted in the source and drain regions by using the same mask as used in the Ti sputtering process, so as to form low concentration regions at contact surfaces and high concentration regions at regions beneath the contact surfaces.

REFERENCES:
patent: 4566026 (1986-01-01), Lee et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 5217923 (1993-06-01), Suguro

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