Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Reexamination Certificate
2009-01-20
2011-11-15
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
C438S149000, C257S223000, C257S291000, C257S292000
Reexamination Certificate
active
08058087
ABSTRACT:
A method for fabricating a TFT array substrate includes following steps. A gate pattern and a first pad pattern are formed on a substrate. A gate insulation layer and a semiconductor layer covering the two patterns are sequentially formed. A patterned photoresist layer having different resist blocks is formed, and patterns and thicknesses of the resist blocks in different regions are adjusted. The semiconductor layer and the gate insulation layer above the first pad pattern are removed through performing an etching process and reducing a thickness of the patterned photoresist layer. After removing the patterned photoresist layer, a source pattern, a drain pattern, and a second pad pattern electrically connected to the first pad pattern are formed. A patterned passivation layer is formed on the gate insulation layer and has a second opening exposing the source pattern or the drain pattern and a third opening exposing the second pad pattern.
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Fang Kuo-Lung
Jan Shiun-Chang
Lin Han-Tu
Tseng Shine-Kai
Au Optronics Corporation
Choudhry Mohammad
Jianq Chyun IP Office
Smith Bradley K
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