Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-04-12
2011-04-12
Bryant, Kiesha R (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257S059000, C257S072000
Reexamination Certificate
active
07923274
ABSTRACT:
After forming a gate electrode (4a) in a first step, a gate insulating film (5), a semiconductor film (8) and a conducting film (12) including a transparent conducting film (9) are stacked, and on the thus obtained multilayered body (18), a resist pattern (13a) including a first opening (14a) for exposing the conducting film (12) therein and a second opening (14b) having a bottom portion (B) above the gate electrode (4a) is formed. Portions of the conducting film (12) and the semiconductor film (8) exposed in the first opening (14a) are etched, the bottom portion (B) of the second opening (14b) is removed for exposing the conducting film (12) therein, and the exposed conducting film (12) is etched, so as to form a TFT (20) in a second step. A pixel electrode (5a), a protection masking layer (17a) and a projection (17b) are formed in a third step.
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International Search Report for PCT/JP2006/310666 mailed Jul. 11, 2006.
Shimada Yoshinori
Tsubata Toshihide
Yagi Toshifumi
Bryant Kiesha R
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Tornow Mark W
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