Method for fabricating thin film transistor

Details Method for fabricating thin film transistor Method for fabricating thin film transistor

1996-10-29

1998-04-21

Niebling, John

Fishing, trapping, and vermin destroying

437 40, 437186, H01L 2184, H01L 21265

Patent

active

057417164

ABSTRACT:
The present invention relates to a TFT comprising: a cylindrical gate electrode formed on a substrate, a gate electrode insulating film formed on said gate electrode, and a round polysilicon channel layer formed on said gate electrode insulating film, wherein said channel layer covers a predetermined portion of said gate electrode insulating film including the inside wall portion and a part of the upper portion of said cylindrical gate electrode, and a method fabricating thereof. The present invention provides improved characteristics of a TFT by increasing the amount of ON current thereof with maximized channel width while the channel length is maintained at a constant value.

REFERENCES:
patent: 5372959 (1994-12-01), Chan
patent: 5374573 (1994-12-01), Cooper et al.
patent: 5411910 (1995-05-01), Son
patent: 5432122 (1995-07-01), Chae
patent: 5532956 (1996-07-01), Watanabe
patent: 5539219 (1996-07-01), Den Boer et al.
patent: 5561308 (1996-10-01), Kamata et al.

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