Method for fabricating thin film transistor

Details Method for fabricating thin film transistor Method for fabricating thin film transistor

1994-09-16

1996-04-02

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 24, 437933, 437937, 437 41, H01L 21265, H01L 29786

Patent

active

055040209

ABSTRACT:
A method for fabricating a thin film transistor includes the steps of: forming a semiconductor layer and a gate electrode on an insulating substrate with a gate insulating film interposed therebetween; and implanting an impurity element into a surface of the semiconductor layer by accelerating hydrogen ions and ions of an element of the group III or the group V of the periodic table using at least one of the gate electrode and a resist mask used for forming the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region of the semiconductor layer is regulated in the range of 1.times.10.sup.19 ions/cm.sup.3 to 1.times.10.sup.20 ions/cm.sup.3.

REFERENCES:
patent: 5397718 (1995-03-01), Furuta et al.
patent: 5403756 (1995-04-01), Yoshinouchi et al.

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