Fishing – trapping – and vermin destroying
Patent
1993-11-15
1994-11-08
Thomas, Tom
Fishing, trapping, and vermin destroying
437913, 437978, 148DIG114, 148DIG150, H01L 21265
Patent
active
053626613
ABSTRACT:
The method comprising the steps of: depositing a semiconductor layer serving as an active layer, a first gate insulation film and an second gate insulation film on an insulation-transparent substrate, in this order; patterning the second gate insulation film using a mask for the patterning of an active region so that it is remained merely at the active region; oxidizing the semiconductor layer except for the active region using the patterned second gate insulation film as an oxidization mask, to isolate the active region from the other portion; forming a gate electrode on the second gate insulation film corresponding to the upper side of the defined active region; implanting impurity-ions in the semiconductor layer using the gate electrode as an ion-implantation mask to form a source region and a drain region; forming a protection film on the whole exposed surface of the resultant structure; forming contact holes in the protection layer so that the source region and the drain region are exposed; and forming a source electrode and a drain electrode, so that they are connected to the source region and the drain region, respectively, via the contact holes.
REFERENCES:
patent: 3974515 (1976-08-01), Ipri et al.
patent: 4104087 (1978-08-01), Ipri et al.
patent: 4419812 (1983-12-01), Topich
patent: 4587711 (1986-05-01), Godejahn, Jr.
patent: 5130264 (1992-07-01), Troxell et al.
Gold Star Co. Ltd.
Thomas Tom
Trinh Michael
White John P.
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