Semiconductor device manufacturing: process – Making passive device
Patent
1999-03-29
2000-12-05
Utech, Benjamin L.
Semiconductor device manufacturing: process
Making passive device
430382, 430723, 430724, 430757, H01L 21331, H01L 2120
Patent
active
061566187
ABSTRACT:
A method for forming thin film resistor with tungsten plug is disclosed. The Method includes the following steps. This method comprises firstly providing a semiconductor device with contact regions wherein a metal barrier layer is formed on top surface of the device. Then forming tungsten layer on the inter-layer dielectric and etching back are carried out until stopping on the barrier metal. Consequentially an inter-layer dielectric is formed on top of said surface of semiconductor device. The next, band layer is formed on the inter-layer dielectric. Nitride layer will be deposited onto said thin film resistor. Portions of said nitride layer and the inter-layer dielectric are all removed. The band layer is patterned to define as contact plug. Forming the inter-layer dielectric over top surface of semiconductor device is achieved. Sequentially anisotropically etching back the inter-layer dielectric to form contact plug. Simultaneously, anisotropically etching back the silicon nitride layer. Inter-layer dielectric that is over top surface of the semiconductor device is removed. Forming metal layer over top surface of the semiconductor is carried out. Then metal layer fills the contact plug. A photoresist layer is formed on the metal layer and also photoresist layer will define this metal area. Finally not only removing portions of the metal layer left uncovered by the photoresist layer, but also removing the photoresist layer are entirely completed.
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Deo Duy-Vu
United Microelectronics Corp.
Utech Benjamin L.
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