Method for fabricating tantalum semiconductor contacts

Coating processes – Electrical product produced – Condenser or capacitor

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156662, 204192C, 357 71, 427 89, 427 90, 427 91, 427 99, 427 42, 427259, 427250, H01L 21443, H01L 21477

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042151562

ABSTRACT:
A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.

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