Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-07-03
2007-07-03
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S093000
Reexamination Certificate
active
10508044
ABSTRACT:
A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).
REFERENCES:
patent: 5246506 (1993-09-01), Arya et al.
patent: 5635408 (1997-06-01), Sano et al.
patent: 6303945 (2001-10-01), Saito et al.
patent: 6399873 (2002-06-01), Sano et al.
patent: 2001/0023971 (2001-09-01), Kondo et al.
patent: 61-008979 (1986-01-01), None
patent: 63-127584 (1988-05-01), None
patent: 07-0150025 (1995-01-01), None
patent: 07-297431 (1995-11-01), None
patent: 09-027627 (1997-01-01), None
patent: 2000-164904 (2000-06-01), None
patent: 2001-189474 (2001-07-01), None
patent: 2002-237609 (2002-08-01), None
Suezaki Takashi
Yamamoto Kenji
Yoshimi Masashi
Hogan & Hartson LLP
Kaneka Corporation
Kebede Brook
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