Method for fabricating T-shaped electrode and metal layer having

Details Method for fabricating T-shaped electrode and metal layer having Method for fabricating T-shaped electrode and metal layer having

1996-07-05

1999-01-05

Trinh, Michael

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

438577, 438579, 148DIG100, H01L 2128

Patent

active

058562320

ABSTRACT:
A method for fabricating a T-shaped gate electrode includes the steps of: forming a fine gate pattern on a semiconductor substrate; forming an insulating layer on the semiconductor substrate on which the gate pattern is formed, and forming a planarizing layer on the insulating layer to planarize the surface of the semiconductor substrate; etching the planarizing layer to expose the top of the insulating layer; isotropically etching the insulating layer to expose the gate pattern using the planarizing layer as a mask; etching the exposed gate pattern to selectively expose the semiconductor substrate; depositing a gate metal to cover the exposed substrate, the insulating layer and the planarizing layer, to form a T-shaped gate; and simultaneously removing the planarizing layer, thereby forming a T-shaped gate metal with improved productivity.

REFERENCES:
patent: 4839304 (1989-06-01), Morikawa
patent: 4959326 (1990-09-01), Roman et al.
patent: 4965218 (1990-10-01), Geissberger
patent: 4980316 (1990-12-01), Huebner
patent: 5030589 (1991-07-01), Noda
patent: 5032541 (1991-07-01), Sakamoto et al.
patent: 5278083 (1994-01-01), Hill

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