Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1990-07-24
1994-05-31
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118723VE, 118726, 505732, 505950, 505475, C23C 1400
Patent
active
053165853
ABSTRACT:
Chemical reactions of superconducting raw materials with active oxygen atoms and their charged particles are accelerated by using at least oxygen plasma in the fabrication process of a superconductive body. Thereby an ionic crystal is grown in a short time, which provides stable superconducting materials of high quality such as high critical temperature and low resistivity. In another aspect, a substrate is irradiated simultaneously with streams of vapor of metal elements, of which a superconductive body is to be composed, and a stream of gas of ions generated in a plasma chamber and film growth is effected while keeping the substrate at a temperature higher than 400.degree. C. to produce a ceramic type superconductive thin film.
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Aida Toshiyuki
Fukazawa Tokuumi
Miyauchi Katsuki
Okamoto Yukio
Takagi Kazumasa
Bueker Richard
Hitachi , Ltd.
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