Method for fabricating stacked semiconductor diodes for high pow

Details Method for fabricating stacked semiconductor diodes for high pow Method for fabricating stacked semiconductor diodes for high pow

1978-11-16

1980-12-09

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29576J, 29580, 29583, B01J 1700

Patent

active

042376009

ABSTRACT:
A semiconductor wafer is appropriately doped to create a P-N or P-I-N junction, and metallized on both its planar surfaces with electrode material. The wafer is then bonded to a second similarly processed wafer. Without damaging the semiconductor material, the stacked wafer is processed so as to delineate a plurality of diodes on each side of the center metallization, such that the diodes on each side are registered with each other. The center metallization is then cut so as to yield a plurality of stacked semiconductor diodes.

REFERENCES:
patent: 3274454 (1966-09-01), Haberecht
patent: 3288662 (1966-11-01), Weisberg
patent: 3897627 (1975-08-01), Klatskin

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