Method for fabricating stacked capacitor of semiconductor memory

Details Method for fabricating stacked capacitor of semiconductor memory Method for fabricating stacked capacitor of semiconductor memory

1994-11-18

1995-11-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

054686717

ABSTRACT:
A method for fabricating a capacitor of a semiconductor memory device, capable of obtaining a sufficient storage capacitance even when a memory cell area is reduced, thereby improving the integration degree of the semiconductor memory device. The method includes the steps of: forming a planarized insulating oxide film on a semiconductor substrate formed with a transistor having an impurity diffusion region; forming a contact hole by use of a contact hole mask; forming an electrode layer over the insulating oxide film such that the electrode layer is in electrical contact with the impurity diffusion region; forming a sacrificial oxide film pattern having a bird's beak shape on a portion of the electrode layer disposed around the contact hole; etching the electrode layer by use of the sacrificial oxide film pattern as an etch barrier until the insulating oxide film is exposed, thereby forming an electrode layer pattern; wet etching the sacrificial oxide film pattern, thereby exposing an upper surface of the electrode layer pattern; and sequentially forming a dielectric film and a plate electrode over the exposed surface of the electrode layer pattern.

REFERENCES:
patent: 5330614 (1994-07-01), Ahn
patent: 5389560 (1995-02-01), Park

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