Method for fabricating stacked capacitor of a DRAM cell

Details Method for fabricating stacked capacitor of a DRAM cell Method for fabricating stacked capacitor of a DRAM cell

1994-12-28

1996-07-02

Fourson, George

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 2170, H01L 2700

Patent

active

055321828

ABSTRACT:
There is disclosed a method for the fabrication of a capacitor of a DRAM, comprising the characteristic steps of: forming a bellows type storage electrode; depositing an impurity-doped polysilicon film on the entire surface of the storage electrode; and diffusing the dopants into impurity-rare edge portions of the storage electrode through an annealing treatment. Accordingly, it is capable of easily securing the capacitance of a capacitor in greater quantity per unit area, and thus, effects a reduction in production cost.

REFERENCES:
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5236859 (1993-08-01), Bae et al.
patent: 5240871 (1993-08-01), Doan et al.

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