Semiconductor device manufacturing: process – Making passive device – Resistor
Patent
1997-04-18
1999-03-02
Bowers, Charles
Semiconductor device manufacturing: process
Making passive device
Resistor
438238, 438453, 438649, H01L 2120
Patent
active
058770607
ABSTRACT:
A method for fabricating SRAM polyloads that allows device dimension reduction yet maintains overall product functionality which includes the following steps: forming an insulating layer above a semiconductor substrate having a conductive gate device and a conductive voltage source line device already formed in it; etching the insulating layer selectively, and forming a first contact window and a second contact window on the surfaces of the conductive gate device and the conductive voltage source line device respectively; forming a polysilicon layer above the insulating layer, and filling up the first and the second contact windows at the same time; forming a silicide layer above the polysilicon layer; etching the silicide layer and the polysilicon layer to form a conductive wire linking the first contact window with the second contact window; and etching selectively section of the silicide layer on the conductive wire to expose the polysilicon layer below, and forming a polyload in the exposed polysilicon layer region thus created.
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Bowers Charles
Chen Jack
Winbond Electronics Corp.
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