Method for fabricating solid state image sensor device having bu

Details Method for fabricating solid state image sensor device having bu Method for fabricating solid state image sensor device having bu

1993-10-18

1996-10-22

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 3, 437 53, H01L 21265, H01L 3118, H01L 2170, H01L 2700

Patent

active

055676324

ABSTRACT:
A solid state image sensor device includes: a photoelectric conversion section having a first conductivity type semiconductor thin region and a second conductivity type semiconductor region in a surface area of a first conductivity type semiconductor layer; a signal electron transfer section formed within the surface area of the first conductivity type semiconductor layer, for transferring a signal electron generated at the photoelectric conversion section; and a signal electron read-out section formed over the surface area of the first conductivity type semiconductor layer, for reading-out the signal electron from the photoelectric conversion section to the signal electron transfer section. The first conductivity type semiconductor thin region is self-aligned with respect to the second conductivity type semiconductor region and this is achieved by using the same mask and controlling the angles of incidence in the ion implantation. It is possible to prevent occurrence of a potential well or a potential barrier which may otherwise occur under the electrode in case any misalignment develops during the photolithography process or any dimension deviation in the electrodes develops during the fabrication and it is possible to enhance the efficiency in which the signal electron is read-out from the photoelectric conversion section.

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"No Image Lag Photodiode Structure In The Interline CCD Image Sensor", Nobukazu Teranishi et al., IEDM, IEEE, Dec. 1982, pp. 324-327.

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