Method for fabricating solar cell

Fishing – trapping – and vermin destroying

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437 24, 437173, 437225, 437937, 148DIG125, 148DIG128, 148DIG153, 136256, H01L 3118

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055102727

ABSTRACT:
In a method of producing a solar cell, a photovoltaic thin semiconductor crystalline film is formed on an underlying substrate and hydrogen passivated throughout the film thickness direction of the photovoltaic film whereby a high efficiency solar cell is obtained. In addition, since the passivation process is performed before forming a rear surface electrode on the thin semiconductor crystalline film, the passivation process is not limited by the rear surface electrode. Thereby, a solar cell having a higher energy conversion efficiency is obtained. The passivation process is performed by exposing the thin semiconductor crystalline film to a hydrogen ion ambient having a low acceleration energy, below 2 KeV, or to a plasma ambient. Therefore, the uniformity of the passivation process at a wafer surface is improved and a large area wafer can be efficient processed. Furthermore, the passivation process can be performed to a plurality of solar cells having the thin semiconductor crystalline films and arranged in a module.

REFERENCES:
patent: 4557037 (1985-12-01), Hanoka et al.
patent: 4927770 (1990-05-01), Swanson
patent: 5010040 (1991-04-01), Jayman
patent: 5304509 (1994-04-01), Sopori
patent: 5449626 (1995-09-01), Hezel
Yagi et al, "Hydrogen Passivation Of Large-Area Polycrystalline Silicon Solar Cells By High-Current Ion Implantation", Twentieth IEEE Photovoltaic Specialists Conference, 1988, pp. 1600-1603.
Schmidt et al, "Improved Efficiencies Of Semiconductor And Metallurgical Grade Cast Silicon Solar Cells By Hydrogen Plasma Treatment", Sixteenth IEEE Photovoltaic Specialists Conference, 1982, pp. 537-542.

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